Gleichmann Sunrise presents new generation of low-voltage PowerMOSFETS from NEC

SuperJunction1 technology reduces gate charge by more   than 30% despite extremely low on-resistance:
Milton Keynes (UK) - Gleichmann Sunrise has expanded its product portfolio with the addition of new low-voltage-PowerMOSFETs from NEC Electronics. The devices, NP110N04PUJ and NP110N055PUJ, feature a gate charge of just 150 nC with an extremely low R_DS(on) of 1.8 mΩ and 2.4 mΩ respectively.

These two devices are the first low-voltage-PowerMOSFETs to use NEC Electronics’ new SuperJunction1 technology. The advantage of this technology: By adding P-doped regions below the active P-well of the trench cells and reducing the resistance of the N-epitaxial layer through higher doping while maintaining an extremely low on-resistance, the structure width can be significantly enlarged and the gate charge thus reduced. This results in a potential reduction of more than 30%., compared with the UMOS-4 trench technology,

Typical fields of application for PowerMOSFETs, manufactured using SuperJunction1 technology, are those where it is important to switch high currents as efficiently as possible within a short time. These include electric power steering (EPS) and industrial drives in the low-voltage field e.g. in forklift trucks or other battery-operated systems.

The new devices, in a popular D2PAK package, operate with drain-source voltages of 40 V and 55 V. Like all members of the NP series, the new devices are qualified to AEC-Q101, support a channel temperature of up to 175°C and are fully RoHS-compliant thanks to tin-plated leads.

Samples and data sheets of the low-voltage-PowerMOSFETs, NP110N04PUJ and NP110N055PUJ, are available now from Gleichmann Sunrise. According to NEC Electronics, volume production is scheduled to start during the first half of 2009.