NEC - Ultra-thin low-voltage MOSFETs in SOT-23F package

Ideally suited for use in portable devices and DC/DC converters:
Milton Keynes (UK) -  Gleichmann Sunrise expands its product portfolio with four new low-voltage PowerMOSFETs, type numbers N0100P, N0301P, N0302P and N0301N, from NEC Electronics. Package heights of the new MOSFETs are reduced by 0.1 mm compared to devices in normal SOT‑23 packages.

A further reduction of the package height was made possible by employing a flat lead structure, whereby the solder contacts protrude flat from the package. Thanks to the flat lead structure, the package can accommodate larger chips. As a result, this enables a reduction of on-resistance by up to 20 percent compared to MOSFETs in SOT23 package. The new MOSFETS are thereby capable of achieving up to 4.5 A (N0301N) of current.

Data sheets and samples of the four new devices - three P-channel MOSFETs and one N-channel MOSFET - are available now. Mass production is scheduled to begin in June 2009.