NECs PowerMOSFETs with 100 V breakdown voltage

For automotive applications demanding high voltage stability:

Milton Keynes (UK) - NEC Electronics Europe’s NP28N10SDE and NP36N10SDE PowerMOSFETs, which were specifically designed for automotive applications, feature a high breakdown voltage of 100 V, low values for R_DS(on) of 41 mΩ and 27 mΩ respectively, a gate charge of just 72nC and a low input capacitance of 3500 pF.

The devices, available now in sample quantities from Gleichmann Electronics, can switch currents of up to 28 A and 36 A respectively. Furthermore, the PowerMOSFETs enable logic level gate drive.

These new members of the NP Series of PowerMOSFETs are housed in a TO-252 (DPAK) package, qualified to AEC-Q101 and support a channel temperature of up to 175°C. The devices are fully RoHS-compliant thanks to tin-plated leads.

Data sheets of the NP28N10SDE and NP36N10SDE PowerMOSFETs can be requested directly from Gleichmann Sunrise.